Electronic data		Thermal data		Steric data
Shells: 2,8,4 Orbitals: [Ne] 3s2 3p2 Electronegativity: 1.7, 1.8 1. Ionization potential: 8.1517 eV 2. Ionization potential: 16.345 eV 3. Ionization potential: 33.492 eV Oxidation states: 4,-4 Electrical conductivity: 2.52e-12 10^6		Melting point: 1410 °C Boiling point: 3265 °C Specific heat: 0.71 J/gK Heat of fusion: 50.550 kJ/mol Heat of vaporization: 384.220 kJ/mol Thermal conductivity: 1.48 W/cmK		Atomic radius: 1.46 Å Ionic radius: 0.26 Å () Covalent radius: 1.11 Å Atomic volume: 12.1 cm³/mol Density (293 K): 2.33 g/cm³ Crystal structure: Cubic: Face centered

Legend     Pocket calculator

Nuclide	Abundance [%]	Mass	Spin	Halflife	Decay mode	Decay tree
28Si	92.21	27.9769	0	--	stable	--
29Si	4.7	28.9765	1/2	--	stable	--
30Si	3.09	29.9738	0	--	stable	--
31Si	0	30.9753	3/2	2.62h	-	View
32Si	0	31.974	0	1.0E02y	-	View

Legend

Name origin:	Latin: silex, silicus, (flint)
Description:	Amorphous form is brown power; crystalline form has gray metallic appearance. Seventh most abundant element in the universe. Second most plentiful element in the earths crust.
Discovered by:	Jöns Berzelius
Year:	1824
Place:	Sweden
Sources:	Makes up major portion of clay, granite, quartz (SiO2), and sand. Commercial production depends on a reaction between sand (SiO2) and carbon at a temperature of around 2200 °C.
Use(s):	Used in glass as silicon dioxide (SiO2). Silicon carbide (SiC) is one of the hardest substances known and used in polishing. Also the crystalline form is used in semiconductors.